Mil'vidskiĭ, M G : rechercher sur Z-Library

Journal of Russian Laser Research

Année:

2003

Langue:

english

Fichier:

PDF, 229 KB

english, 2003

Direction heterolasers based on GaInPAs/InP

V. V. Bezotosnyi, A. P. Bogatov, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, E. G. Shevchenko

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 2.97 MB

english, 1984

High-efficiency GaInPAs/InP light-emitting diodes

L. M. Dolginov, A. E. Drakin, P. G. Eliseev, T. V. Berdnikova, M. G. Mil'vidskiĭ, V. P. Orlov, Y. K. Panteleev, B. N. Sverdlov, E. G. Shevchenko

Année:

1978

Langue:

english

Fichier:

PDF, 125 KB

english, 1978

ChemInform Abstract: Semiconductor Materials for Present-Day Solid-State Electronics

M. G. Mil'vidskii, V. B. Ufimtsev

Journal:

ChemInform

Année:

2000

Fichier:

PDF, 23 KB

2000

Creation of defects during the growth of semiconductor single crystals and films

M.G. Mil'vidskii, E.P. Bochkarev

Journal:

V.I. Vdovin, M.G. Mil'vidskii, T.G. Yugova

Année:

1978

Langue:

english

Fichier:

PDF, 1.63 MB

english, 1978

Antiphase boundaries in GaAs layers on Si and Ge

Journal:

Année:

1993

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1993

Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

V.I. Vdovin, M.G. Mil'vidskii, T.G. Yugova, K.L. Lyutovich, S.M. Saidov

Journal:

K.L. Enisherlova, T.F. Rusak, M.G. Mil'vidskii, V.J. Reznick

Année:

1994

Langue:

english

Fichier:

PDF, 1.41 MB

english, 1994

Effect of native point defects on morphology of gettering centres in CZ-silicon wafers

Journal:

Materials Science and Engineering: B

Année:

1996

Langue:

english

Fichier:

PDF, 381 KB

english, 1996

The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals

V.K. Artemyev, V.I. Folomeev, V.P. Ginkin, A.V. Kartavykh, M.G. Mil’vidskii, V.V. Rakov

Journal:

A.V. Kartavykh, E.S. Kopeliovich, M.G. Mil'vidskii, V.V. Rakov

Année:

2001

Langue:

english

Fichier:

PDF, 372 KB

english, 2001

Anomalous effects of dopant distribution in Ge single crystals grown by FZ-technique aboard spacecrafts

Journal:

A.I. Belogorokhov, M.G. Mil'vidskii, A.N. Osipova

Année:

1999

Langue:

english

Fichier:

PDF, 184 KB

english, 1999

Growth and properties of thin InGaAs epitaxial layers on InP

Journal:

Journal of Molecular Structure

Année:

1997

Langue:

english

Fichier:

PDF, 410 KB

english, 1997

Properties of Si donors and persistent photoconductivity in AlGaN

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M.G. Mil'vidskii, J.M. Redwing, M. Shin, M. Skowronski, D.W. Greve, R.G. Wilson

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 286 KB

english, 1998

Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy

A.Y Polyakov, A.V Govorkov, N.B Smirnov, M.G Mil'vidskii, J.M Redwing, M Shin, M Skowronski, D.W Greve

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 1.37 MB

english, 1998

Deep centers in AlGaN-based light emitting diode structures

A.Y Polyakov, N.B Smirnov, A.V Govorkov, M.G Mil'vidskii, A.S Usikov, B.V Pushnyi, W.V Lundin

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 161 KB

english, 1999

Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy

A.Y Polyakov, A.V Govorkov, N.B Smirnov, M.G Mil'vidskii, D.V Tsvetkov, S.I Stepanov, A.E Nikolaev, V.A Dmitriev

Journal:

physica status solidi (c)

Année:

1999

Langue:

english

Fichier:

PDF, 193 KB

english, 1999

Dislocation pattern formation in epitaxial structures based on SiGe alloys

T.G Yugova, V.I Vdovin, M.G Mil’vidskii, L.K Orlov, V.A Tolomasov, A.V Potapov, N.V Abrosimov

Journal:

Thin Solid Films

Année:

1998

Langue:

english

Fichier:

PDF, 257 KB

english, 1998

Thermally induced strain relaxation in SiGe/Si heterostructures with low-temperature buffer layers

V. I. Vdovin, T. G. Yugova, M. M. Rzaev, F. Schäffler, M.G. Mil'vidskii

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 307 KB

english, 2005

Formation of extended defects in SiGe/Si heterostructures with SiGeC intermediate layers

V. I. Vdovin, T. A. Torack, Lu Fei, V. Ya. Reznik, M. G. Mil'vidskii, R. Falster

Journal:

physica status solidi (c)

Année:

2007

Langue:

english

Fichier:

PDF, 865 KB

english, 2007

Use of light-emitting diodes based on heterojunctions of four solid solutions to measure moisture

L. M. Dolginov, L. V. Druzhinina, M. G. Mil'vidskii, M. Mukhitdinov, É. S. Musaev, V. M. Rozhkov, E. G. Shevchenko

Journal:

Measurement Techniques

Année:

1981

Langue:

english

Fichier:

PDF, 421 KB

english, 1981

Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures

M. L. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin

Journal:

Journal of Russian Laser Research

Année:

1984

Langue:

english

Fichier:

PDF, 1.38 MB

english, 1984

Semiconductor materials for present-day solid-state electronics

M. G. Mil’vidskii, V. B. Ufimtsev

Journal:

Inorganic Materials

Année:

2000

Langue:

english

Fichier:

PDF, 742 KB

english, 2000

Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. A. Shlensky, M. G. Mil’vidskii, S. J. Pearton, N. N. Faleev, V. T. Bublik, K. D. Chsherbatchev, A. Osinsky, P. E. Norris, V. A. Dravin, R. G. Wilson

Journal:

Journal of Electronic Materials

Année:

2002

Langue:

english

Fichier:

PDF, 235 KB

english, 2002

Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt

A. E. Kunitsyn, V. V. Chaldyshev, A. G. Mil’vidskaya, M. G. Mil’vidskii

Journal:

M. G. Mil’vidskii, V. V. Chaldyshev

Année:

1997

Langue:

english

Fichier:

PDF, 59 KB

english, 1997

Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 352 KB

english, 1998

Generation of thermal donors in silicon: Effect of self-interstitials

V. V. Voronkov, G. I. Voronkova, A. V. Batunina, V. N. Golovina, M. G. Mil’vidskii, A. S. Gulyaeva, N. B. Tyurina, L. V. Arapkina

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 102 KB

english, 2000

Serge(overset{lower0.5emhbox{(smash{scriptscriptstylesmile})}}{l})Petrovich Solov’ev (1932–2000)

V. N. Brudnyi, V. T. Bublik, B. N. Goshitskii, V. V. Emtsev, Yu. A. Kazanskii, R. F. Konopleva, Yu. V. Konobeev, N. G. Kolin, I. I. Kuz’min, M. G. Mil’vidskii, R. P. Ozerov, V. B. Osvenskii, V. G. Plo

Journal:

M. V. Mezhennyi, M. G. Mil’vidskii, V. F. Pavlov, V. Ya. Reznik

Année:

2000

Langue:

english

Fichier:

PDF, 53 KB

english, 2000

Dynamic properties of dislocations in silicon wafers heat-treated at low temperatures

Journal:

A. V. Kartavykh, É. S. Kopeliovich, M. G. Mil’vidskii, V. V. Rakov

Année:

2001

Langue:

english

Fichier:

PDF, 149 KB

english, 2001

Earth optimization of space experiment on growth of germanium by floating-zone technique with the use of rotating magnetic fields

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 83 KB

english, 2001

Shallow thermal donors in nitrogen-doped silicon single crystals

V. V. Voronkov, G. I. Voronkova, A. V. Batunina, V. N. Golovina, L. V. Arapkina, N. B. Tyurina, A. S. Gulyaeva, M. G. Mil’vidskii

Journal:

M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Année:

2002

Langue:

english

Fichier:

PDF, 68 KB

english, 2002

Specific features in the generation and motion of dislocations in silicon single crystals doped with nitrogen

Journal:

M. V. Mezhennyi, M. G. Mil’vidskii, V. F. Pavlov, V. Ya. Reznik

Année:

2002

Langue:

english

Fichier:

PDF, 69 KB

english, 2002

Specific features in the generation and motion of dislocations in heat-treated silicon wafers

Journal:

M. V. Mezhennyi, M. G. Mil’vidskii, T. G. Yugova

Année:

2002

Langue:

english

Fichier:

PDF, 531 KB

english, 2002

Effect of the composition of the solid solution on the high-temperature microhardness of SiGe heteroepitaxial layers grown on Ge and Si substrates

Journal:

M. V. Mezhennyi, M. G. Mil’vidskii, A. I. Prostomolotov

Année:

2003

Langue:

english

Fichier:

PDF, 246 KB

english, 2003

Simulation of the stresses produced in large-diameter silicon wafers during thermal annealing

Journal:

V. T. Bublik, S. Yu. Matsnev, K. D. Shcherbachev, M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Année:

2003

Langue:

english

Fichier:

PDF, 225 KB

english, 2003

Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers

Journal:

V. V. Voronkov, A. V. Batunina, G. I. Voronkova, M. G. Mil’vidskii

Année:

2003

Langue:

english

Fichier:

PDF, 138 KB

english, 2003

Generation of shallow nitrogen-oxygen donors as a method for studying nitrogen diffusion in silicon

Journal:

T. G. Yugova, M. G. Mil’vidskii, V. I. Vdovin

Année:

2004

Langue:

english

Fichier:

PDF, 99 KB

english, 2004

Defect formation in Ge1−xSix/Ge(111) epitaxial heterostructures

Journal:

M. G. Mil’vidskii, V. B. Ufimtsev

Année:

2004

Langue:

english

Fichier:

PDF, 408 KB

english, 2004

A review of the bookAtomy legiruyushchikh primese(overset{lower0.5emhbox{(smash{scriptscriptstylesmile})}}{l} )v poluprovodnikakh(Atoms of doping impurities in semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004)

Journal:

V. I. Vdovin, M. G. Mil’vidskii, T. G. Yugova

Année:

2005

Langue:

english

Fichier:

PDF, 24 KB

english, 2005

Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates

Journal:

T. G. Yugova, M. G. Mil’vidskii, M. M. Rzaev, F. Schäffler

Année:

2005

Langue:

english

Fichier:

PDF, 63 KB

english, 2005

Thermally stimulated relaxation of misfit strains in Si1−xGex/Si(100) heterostructures with different buffer layers

Journal:

N. A. Verezub, A. I. Prostomolotov, M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Année:

2005

Langue:

english

Fichier:

PDF, 81 KB

english, 2005

Theoretical and experimental study of the formation of grown-in and as-grown microdefects in dislocation-free silicon single crystals grown by the Czochralski method

Journal:

M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Année:

2005

Langue:

english

Fichier:

PDF, 336 KB

english, 2005

Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Année:

2009

Langue:

english

Fichier:

PDF, 273 KB

english, 2009

Internal-getter formation in nitrogen-doped dislocation-free silicon wafers

M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Journal:

Russian Microelectronics

Année:

2011

Langue:

english

Fichier:

PDF, 1.94 MB

english, 2011

Effect of annealing on the electrical properties of nitrogen-doped silicon single crystals grown by crucibleless zone melting

G. I. Voronkova, A. V. Batunina, V. V. Voronkov, V. N. Golovina, A. S. Gulyaeva, N. B. Tyurina, M. G. Mil’vidskiĭ

Journal:

R. V. Goldstein, M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik, K. B. Ustinov, P. S. Shushpannikov

Année:

2009

Langue:

english

Fichier:

PDF, 180 KB

english, 2009

Experimental and theoretical investigation of formation of the oxygen-containing precipitate-dislocation loop system in silicon

Journal: